Samsung Electronics said it struck a pact with Broadcom to widen cooperation across memory chips, contract chip making and advanced packaging envisaged to exceed $200 billion until 2030.
The collaboration is slated to run for about five years and combines Broadcom’s custom‑ASIC design work with Samsung’s manufacturing and packaging capabilities, including fabricating Broadcom’s next‑generation communications chips on Samsung’s sub‑2‑nanometre process and joint development of HBM products.
"The expanded collaboration reflects Samsung’s focus on supporting customers with end‑to‑end semiconductor technologies," the company said in a statement.
Samsung and Broadcom framed the pact as a response to growing demand for custom AI accelerators and as a way to boost utilisation at Samsung’s advanced fabs so it can narrow the gap with rivals in foundry capacity.
The tie‑up follows a series of recent wins for Samsung’s contract manufacturing push, including a previously disclosed $16.5 billion logic‑chip deal to make chips for Tesla.
Samsung said it expects to win additional orders for advanced 2‑nanometre foundry work in the near term as it deepens talks with major technology customers.
